Front Side Metallization of n- and p-Type, High-Efficiency, Single-Crystalline Si Solar Cells: Assessing the Temperature-Dependent Series Resistance

dc.contributor.author	Willsch, Benjamin
dc.contributor.author	Kumar, Praveen
dc.contributor.author	Eibl, Oliver
dc.date.accessioned	2016-12-14T15:27:48Z
dc.date.available	2016-12-14T15:27:48Z
dc.date.issued	2016
dc.identifier.issn	1543-186X
dc.identifier.uri	http://hdl.handle.net/10900/73727
dc.language.iso	en	de_DE
dc.publisher	Springer	de_DE
dc.relation.uri	http://dx.doi.org/10.1007/s11664-016-4459-8	de_DE
dc.rights	info:eu-repo/semantics/closedAccess
dc.subject.ddc	530	de_DE
dc.subject.ddc	600	de_DE
dc.title	Front Side Metallization of n- and p-Type, High-Efficiency, Single-Crystalline Si Solar Cells: Assessing the Temperature-Dependent Series Resistance	de_DE
dc.type	Article	de_DE
utue.quellen.id	20160915142648_00675
utue.publikation.seiten	2656-2661	de_DE
utue.personen.roh	Willsch, Benjamin
utue.personen.roh	Kumar, Praveen
utue.personen.roh	Eibl, Oliver
dcterms.isPartOf.ZSTitelID	Journal of Electronic Materials	de_DE
dcterms.isPartOf.ZS-Issue	6	de_DE
dcterms.isPartOf.ZS-Volume	45	de_DE
utue.fakultaet	07 Mathematisch-Naturwissenschaftliche Fakultät	de_DE